Low threshold injection laser in HgCdTe
Identifieur interne : 000255 ( Main/Exploration ); précédent : 000254; suivant : 000256Low threshold injection laser in HgCdTe
Auteurs : RBID : ISTEX:11664_1993_Article_BF02817525.pdfEnglish descriptors
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Abstract
Narrow-stripe transverse injection lasers in HgCdTe have been successfully fabricated and operated. The double heterostructure of the laser was grown by molecular beam epitaxy on a {111} CdZnTe substrate. The n type base was extrinsically indium doped but other p type layers were only doped by deviation from stoichiometry. Laser emission at 3.4 μm and 3.56 μm was obtained at 78K under pulsed current conditions. Threshold current density as low as 90 A/cm2 at 40K was achieved. Over 65K, the threshold current variation with temperature showed a sharp increase due to a drift-current leakage in the structure.
DOI: 10.1007/BF02817525
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Destefanis</name><affiliation wicri:level="3"><mods:affiliation>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name>A. Million</name><affiliation wicri:level="3"><mods:affiliation>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name>T. Colin</name><affiliation wicri:level="3"><mods:affiliation>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name>J. Bablet</name><affiliation wicri:level="3"><mods:affiliation>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1993_Article_BF02817525.pdf</idno><date when="1993">1993</date><idno type="doi">10.1007/BF02817525</idno><idno type="wicri:Area/Main/Corpus">000902</idno><idno type="wicri:Area/Main/Curation">000902</idno><idno type="wicri:Area/Main/Exploration">000255</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CdZnTe substrate</term><term>Double heterostructures</term><term>HgCdTe</term><term>In doping</term><term>Injection laser</term><term>MBE</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Narrow-stripe transverse injection lasers in HgCdTe have been successfully fabricated and operated. The double heterostructure of the laser was grown by molecular beam epitaxy on a {111} CdZnTe substrate. The n type base was extrinsically indium doped but other p type layers were only doped by deviation from stoichiometry. Laser emission at 3.4 μm and 3.56 μm was obtained at 78K under pulsed current conditions. Threshold current density as low as 90 A/cm2 at 40K was achieved. Over 65K, the threshold current variation with temperature showed a sharp increase due to a drift-current leakage in the structure.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="9cf0ce686a9b5abadd06e5f2a67d51b3800315f9"><titleInfo lang="eng"><title>Low threshold injection laser in HgCdTe</title></titleInfo><name type="personal"><namePart type="given">Ph.</namePart><namePart type="family">Bouchut</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex, France</affiliation></name><name type="personal"><namePart type="given">G.</namePart><namePart type="family">Destefanis</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex, France</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Million</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex, France</affiliation></name><name type="personal"><namePart type="given">T.</namePart><namePart type="family">Colin</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex, France</affiliation></name><name type="personal"><namePart type="given">J.</namePart><namePart type="family">Bablet</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>LETI (CEA-Technologies Avancées), DOPT-CEN/G-85 X, F38041, Grenoble Cedex, France</affiliation></name><typeOfResource>text</typeOfResource><genre>Special Issue Paper</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1992-10-12</dateCreated><dateValid encoding="w3cdtf">2008-01-18</dateValid><copyrightDate encoding="w3cdtf">1993</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Narrow-stripe transverse injection lasers in HgCdTe have been successfully fabricated and operated. The double heterostructure of the laser was grown by molecular beam epitaxy on a {111} CdZnTe substrate. The n type base was extrinsically indium doped but other p type layers were only doped by deviation from stoichiometry. Laser emission at 3.4 μm and 3.56 μm was obtained at 78K under pulsed current conditions. Threshold current density as low as 90 A/cm2 at 40K was achieved. Over 65K, the threshold current variation with temperature showed a sharp increase due to a drift-current leakage in the structure.</abstract><subject lang="eng"><genre>Key words</genre><topic>CdZnTe substrate</topic><topic>double heterostructures</topic><topic>HgCdTe</topic><topic>In doping</topic><topic>injection laser</topic><topic>MBE</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Journal of Elec Materi</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1993</partNumber><partNumber>Volume: 22</partNumber><partNumber>Number: 8</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1993-08-01</dateIssued><copyrightDate encoding="w3cdtf">1993</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Electronics and Microelectronics, Instrumentation</topic><topic>Solid State Physics and Spectroscopy</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 49</identifier><recordInfo><recordOrigin>The Minerals, Metals & Materials Society, 1993</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02817525</identifier><identifier type="matrixNumber">Art38</identifier><identifier type="local">BF02817525</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1061</start><end>1065</end></extent></part><recordInfo><recordOrigin>The Minerals, Metals & Materials Society, 1993</recordOrigin><recordIdentifier>11664_1993_Article_BF02817525.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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